2N3906-RTK/P

The 2N3906-RTK/P is one member of the 2N3906 family which is designed as the epitaxial planar PNP transistor device that can be used in general purpose and switching applications. Features of this device are:(1)low leakage current: Icex = -50 nA (max.), Ibl = -50 nA (max.);(2)excellent DC current gain linearity;(3)low saturation voltage: -0.4 V (max.) @ Ic= -50 mA, IB= -5 mA;(4)low collector output capacitance: Cob = 4.5 pF (max.) @ VCB= -5 V;(5)cpmplementary to 2N3904S.

The absolute maximum ratings of the 2N3906-RTK/P can be summarized as:(1)collector-base voltage: -40 V;(2)collector-emitter voltage: -40 V;(3)emitter-base voltage: -5 V;(4)collector current: -200 mA;(5)base current: -50 mA;(6)collector power dissipation: 350 mW;(7)junction temperature: 150 ;(8)storage temperature range: -55 to +150 . If you want to know more information about the 2N3906-RTK/P, please download the datasheet in www.seekic.com or www.chinaicmart.com .