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2N3960UB

Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0003• Reference document:MIL-PRF-19500/399Application• General purpose• Low power switching transistor• NPN silicon transistorSpecifications Characteri...

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SeekIC No. : 004218968 Detail

2N3960UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0003• Reference document:MIL-PRF-19500/399Application• General purpo...

2N3960UB Data Sheet

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Part Number:
2N3960UB
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0003
• Reference document:
MIL-PRF-19500/399


Application

• General purpose
• Low power switching transistor
• NPN silicon transistor


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO 12 Volts
Collector-emitter voltage VCEO 20 Volts
Emitter-base voltage VEBO 4.5 Volts
Power Dissipation, TA = 25
Derate linearly above 25		 PT 400
2.3		 W
mW/
Operating Junction Temperature TJ -65 to +200
Storage Temperature Tstg -65 to +200



Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N3960UBJ)
• JANTX level (2N3960UBJX)
• JANTXV level (2N3960UBJV)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV
• Radiation testing (total dose) upon request


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