Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0003• Reference document:MIL-PRF-19500/399Application• General purpose• Low power switching transistor• NPN silicon transistorSpecifications Characteri...
2N3960UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0003• Reference document:MIL-PRF-19500/399Application• General purpo...
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| Characteristics | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 12 | Volts |
| Collector-emitter voltage | VCEO | 20 | Volts |
| Emitter-base voltage | VEBO | 4.5 | Volts |
| Power Dissipation, TA = 25 Derate linearly above 25 |
PT | 400 2.3 |
W mW/ |
| Operating Junction Temperature | TJ | -65 to +200 | |
| Storage Temperature | Tstg | -65 to +200 |