2N4126

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Package / Case : TO-92
Maximum Operating Frequency : 250 MHz
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.2 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 25 V
DC Collector/Base Gain hfe Min : 120


Features:

·PNP Silicon Epitaxial Transistor
·for switching and amplifier applications.
·Especially suit-able for AF-driver and
·low-power output stages.
·As complementary type, the NPN transistor
·2N4124 is recommended.


Specifications

Item	Symbol	Ratings	Unit
Collector to base voltage	-VCBO	25	V
Collector to base voltage	-VCEO	25	V
Emitter to base voltage	-VEBO	4	V
Collector current	-IC	200	A
Collector peak current	-ICM	800	A
Base Current	-IB	50	m
Power Dissipation at Tamb = 25 °C	Ptot	6251)
Junction temperature	Tj	150	°C
Storage temperature	Ts	55 to +150	°C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.