Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0014• Reference document: MIL-PRF-19500/511Application• General purpose switching transistor• Low power• PNP silicon transistorSpecifications PARAMETER...
2N4261UB: Features: • Hermetically sealed Cersot ceramic• Also available in chip configuration• Chip geometry 0014• Reference document: MIL-PRF-19500/511Application• General purp...
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| PARAMETER |
SYMBOL |
Rating |
UNIT |
| Collector-Emitter Voltage |
VCEO |
15 |
Volts |
| Collector-Base Voltagee |
VCBO |
15 |
Volts |
| Emitter-Base Voltage |
VEBO |
4.5 |
Volts |
| Peak Collector Current |
IC |
30 |
mA |
| Power Dissipation, TA = 25 Derate linearly above 25 |
PT |
200 1.14 |
mW mW/ |
| Thermal Resistance |
RJA |
0.86 |
/mW |
| Operating Junction Temperature Storage Temperature |
TJ TSTG |
-65 to +200 |