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Part Number: 2N4261UB

 

 

 

 

Description: SEMICOA offers:• Screening and processing per MIL-PRF-19500 Appendix E• JAN level (2N4261UBJ)&#...


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2N4261UB General Description


SEMICOA offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N4261UBJ)
• JANTX level (2N4261UBJX)
• JANTXV level (2N4261UBJV)
• JANS level (2N4261UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request

2N4261UB Maximum Ratings

PARAMETER
SYMBOL
Rating
UNIT
Collector-Emitter Voltage
VCEO
15
Volts
Collector-Base Voltagee
VCBO
15
Volts
Emitter-Base Voltage
VEBO
4.5
Volts
Peak Collector Current
IC
30
mA
Power Dissipation, TA = 25
Derate linearly above 25
PT
200
1.14
mW
mW/
Thermal Resistance
RJA
0.86
/mW
Operating Junction Temperature
Storage Temperature
TJ
TSTG
-65 to +200

2N4261UB Features

• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 0014
• Reference document: MIL-PRF-19500/511

2N4261UB Typical Application

• General purpose switching transistor
• Low power
• PNP silicon transistor

2N4261UB datasheet

2N4261UB
PDF/DataSheet Download

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