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- Table of contents:
2N4264
-
Suppliers
DataSheet
General Description
2N4264 Maximum Ratings
|
Ratings |
Symbol |
Value |
Unit |
|
Collector-Emitter Voltage |
VCEO |
15 |
Vdc |
| Collector-Base Voltage |
VCBO |
30 |
Vdc |
| Emitter-Base Voltage |
VEBO |
6.0 |
Vdc |
| Collector Current- Continuous |
IC |
200 |
mAdc |
|
Total Device Dissipation @ TA = 25°C |
PD |
350 |
mW |
| Total Device Dissipation @ TC = 25°C Derate above 25°C |
PD |
1.0 |
Watts mW/°C |
| Operating & Storage Junction Temperature Range |
Tj, Tstg |
55 to +150 |
0C |
2N4264
PDF/DataSheet Download
- Datasheet: 2N4264
- File Size: 143755 KB
- Manufacturer: ONSEMI [ON Semiconductor]
- Click here to Download
- ·2N4000
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO39 Metal Package
- 11364 KB
- ·2N4001
- SEME-LAB [Seme LAB]
- Bipolar NPN Device in a Hermetically sealed TO39 Metal Package.
- 11372 KB
- ·2N4012
- ETC [ETC]
- silicon transistors UHF/VHF power transistors
- 251201 KB
- ·2N4013
- CENTRAL [Central Semiconductor Corp]
- Small Signal Transistors
- 34618 KB
- ·2N4014
- STMICROELECTRONICS [STMicroelectronics]
- HIGH-VOLTAGE, HIGH CURRENT SWITCH
- 80734 KB
- ·2N4015
- CENTRAL [Central Semiconductor Corp]
- Dual Transistors
- 144754 KB
- ·2N4016
- CENTRAL [Central Semiconductor Corp]
- Dual Transistors
- 53998 KB
- ·2N4021
- ETC [ETC]
- SILICON DUAL DIFFERNTIAL AMPLIFIER TRANSISTORS
- 144754 KB
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