2N4351A

The 2N4351A is designed as one kind of N-channel MOSFET. The absolute maximum ratings of this device can be summarized as:(1)Storage Temperature: -65 to +200 °C;(2)Operating Junction Temperature: -55 to +150 °C;(3)Continuous Power Dissipation: 375 mW;(4)Drain to Source: 100 mA;(5)Drain to Body voltage: 25 V;(6)Drain to Source voltage: 25 V;(7)Peak Gate to Source: ±125V.

The electrical characteristics of the 2N4351A can be summarized as:(1)Drain to Source Breakdown Voltage: 25 V;(2)Drain to Source "On" Voltage: 1 V;(3)Gate to Source Threshold Voltage: 1 to 5 V;(4)Gate Leakage Current: 10 pA;(5)Drain Leakage Current "Off": 10 nA;(6)Drain Current "On": 3 mA;(7)Forward Transconductance: 1000 S;(8)Drain to Source "On" Resistance: 300 ;(9)Reverse Transfer Capacitance: 1.3 pF;(10)Input Capacitance: 5.0 pF;(11)Drain to Body Capacitance: 5.0 pF. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. If you want to know more information such as the electrical characteristics about 2N4351A, please download the datasheet in www.seekic.com or www.chinaicmart.com.