2N4401RLRMG

Transistors Bipolar (BJT) 600mA 60V NPN

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SeekIC No. : 00211582 Detail

2N4401RLRMG: Transistors Bipolar (BJT) 600mA 60V NPN

floor Price/Ceiling Price

Part Number:
2N4401RLRMG
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/25

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 40 V
Emitter- Base Voltage VEBO : 6 V Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 20 at 0.1 mA at 1 V Configuration : Single
Maximum Operating Frequency : 250 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92
Packaging : Ammo    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Ammo
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.6 A
Maximum Operating Frequency : 250 MHz (Min)
DC Collector/Base Gain hfe Min : 20 at 0.1 mA at 1 V


Parameters:

Technical/Catalog Information2N4401RLRMG
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)40V
Current - Collector (Ic) (Max)600mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 1V
Vce Saturation (Max) @ Ib, Ic400mV @ 15mA, 150mA
Frequency - Transition250MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeThrough Hole
Package / CaseTO-92-3, TO-226AA (Formed Leads)
PackagingTape & Box (TB)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N4401RLRMG
2N4401RLRMG



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