2N4919

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 3 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Maximum Operating Frequency : 3 MHz (Min)
Package / Case : TO-225


Features:

• Low Saturation Voltage - V_CE(sat) = 0.6 Vdc (Max) @ I_C = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction - PD = 30 W @ T_C = 25
C
• Excellent Safe Operating Area
• Gain Specified to IC = 1.0 Amp
• Complement to NPN 2N4921, 2N4922, 2N4923




Specifications

Ratings	Symbol	2N4918	2N4919	2N4920	Unit
CollectorEmitter Voltage CollectorBase Voltage EmitterBase Voltage Collector Current - Continuous (1) Base Current Total Power Dissipation @ TC = 25°C Derate above 25°C Operating & Storage Junction Temperature Range	VCEO VCB VEB IC IB PD TJ,TSTG	40	60	80	Vdc Vdc Vdc Adc Adc Watts W/°C °C
		40	60	80
		5.0 1.0 3.0 1.0 30 0.24 -65to+150

Parameters:

Technical/Catalog Information	2N4919
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	1A
Power - Max	30W
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic	600mV @ 100mA, 1A
Frequency - Transition	3MHz
Current - Collector Cutoff (Max)	100A
Mounting Type	Through Hole
Package / Case	TO-225-3
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N4919 2N4919