2N4923

Configuration :
Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 3 MHz
Packaging : Box
Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 40
Package / Case : TO-126


Features:

• Low Saturation Voltage - V_CE(sat) = 0.6 Vdc (Max) @ I_C = 1.0 Amp
• Excellent Power Dissipation Due to Thermopad Construction - P_D = 30 W @ T_C = 25°C
• Excellent Safe Operating Area
• Gain Specified to I_C = 1.0 Amp
• Complement to PNP 2N4918, 2N4919, 2N4920




Specifications

Ratings	Symbol	2N4921	2N4922	2N4923	Unit
Collector-Emitter Voltage	VCEO	40	60	80	Vdc
Collector-Base Voltage	VCE	40	60	80	Vdc
Emitter-Base Voltage	VEB	5.0			Vdc
Collector Current - Continuous (1)	IC	1.0 3.0			Adc
Base Current - Continuous	IB	10			Adc
Total Power Dissipation @ TC = 25 Derate above 25°C	PD	30 0.24			Watts W/°C
Operating & Storage Junction Temperature Range	TJ, Tstg	-65 to +150			0C

THERMAL CHARACTERISTICS

Characteristics	Symbol	Max.	Unit
Thermal Resistance, Junction-to-Case	JC	4.16	0C/W

(1) The 1.0 Amp maximum I_C value is based upon JEDEC current gain requirements.
The 3.0 Amp maximum value is based upon actual current handling capability of the device (see Figures 5 and 6).
(2) Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.

Parameters:

Technical/Catalog Information	2N4923
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	1A
Power - Max	-
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Vce Saturation (Max) @ Ib, Ic	-
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N4923 2N4923 497 3109 5 ND 49731095ND 497-3109-5