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Part Number: 2N4957UB

 

 

 

 

 

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2N4957UB Maximum Ratings

Rating
Symbol
Rating
Unit
Collector-Base voltage
VCBO
30
V
Collector-Emitter voltage
VCEs
30
V
Emitter-Base voltage
VCEO
3.0
V
Collector Current, Continuous
IC
30
mA
Junction temperature
Tj
-65 to +200
Storage temperature
Tstg
-65 to +200

2N4957UB Features

·  Small signal RF silicon transistor designed for high-gain, low-noise applications.
·  Housed in a cersot case.
·  Also available in chip form using the 0006 chip geometry.
·  The Min and Max limits shown are per MIL-PRF-19500/426 which Semicoa meets in all cases.

2N4957UB datasheet

2N4957UB
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