Transistors Bipolar (BJT) PNP Transistor General Purpose
2N5400: Transistors Bipolar (BJT) PNP Transistor General Purpose
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 120 V | ||
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 0.6 A | ||
| DC Collector/Base Gain hfe Min : | 40 | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-92 | Packaging : | Bulk |
| Rating | Symbol | 2N5400 | 2N5401 | Unit |
| CollectorEmitter Voltage | VCEO | 120 | 60 | Vdc |
| CollectorBase Voltage | VCBO | 40 | 60 | Vdc |
| EmitterBase Voltage | VEBO | 5.0 | 5.0 | Vdc |
| Collector Current - Continuous | IC | 600 | 600 | Adc |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 625 5.0 |
Watts W/ | |
| Total Device Dissipation @ TC = 25 Derate above 25 |
PD | 1.5 12 |
Watts W/ | |
| Operating and Storage Junction Temperature Range |
TJ, Tstg | 65 to +200 | ||
| Technical/Catalog Information | 2N5400 |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | PNP |
| Voltage - Collector Emitter Breakdown (Max) | 120V |
| Current - Collector (Ic) (Max) | 600mA |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 10mA |
| Frequency - Transition | 400MHz |
| Current - Collector Cutoff (Max) | - |
| Mounting Type | Through Hole |
| Package / Case | TO-92-3, TO-226AA (Straight Leads) |
| Packaging | Bulk |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2N5400 2N5400 2N5400OS ND 2N5400OSND 2N5400OS |