2N550

      2N550 is a kind of NPN epitaxial silicon transistor . The specifications of the amplifier transistor is as follows: the collector-emitter voltage is 140 V while Collector dissipation is 625 mW.
      There are some absolute maximum ratings about it when Ta is 25 unless otherwise noted. Collector-base voltage(VCBO) is 160 V. Collector-emitter voltage(VCEO) is 140 V. Emitter-base voltage(VEBO) is 6V. Collector current(Ic) is 600 mA. Collector dissipation(Pc) is 625mW. Junction temperature(Tj) is 150. Storage temperature(Tstg) is -55 to 150. Besides, there are also some electrical characteristics about it when Ta is 25 unless otherwise noted. Collector-base breakdown voltage(BV_CBO) is 160 V min when Ic is 100A abd IE is 0. Collector-emitter breakdown voltage(BV_CEO) is 140 V min when Ic is 1 mA and IB is 0. Emitter-base breakdown voltage(BV_EBO) is 6 V min when IE is 10 A and Ic is 0. Collector cut-off current (I_CBO) is 100 nA max when V_CB is 100 V and IE is 0. Emitter cut-off current (I_EBO) is 50 nA max when V_EB is 4 V and Ic is 0 . DC current gain(H_FE) is 60 min when Ic is 1 mA and V_CE is 5 V , or is 60 min and 250 max when Ic is 10 mA and V_CE is 5 V , or is 20 min when Ic is 50 mA and V_CE is 5 V . Collector-emitter saturation voltage(V_CE(sat) ) is 0.15V max when Ic is 10 mA and IB is 1 mA, or is 0.25 V max when Ic is 50 mA and IB is 5 mA. Base-emitter saturation voltage(V_BE(sat) ) is 1 V max when Ic is 10 mA and IB is 1 mA, or is 1.2V max when Ic is 50 mA and IB is 5 mA. Current gain bandwidth product(f_T) is 100 MHz min and 300 MHz max when Ic is 10 mA , V_CE is 5V and f is 100 MHz. Output capacitance (Cob) is 6 pF max when V_CB is 10 V, I_E is 0 , f is 100MHz. Noise figure(NF) is 10 dB max when Ic is 250A , VCE is 5 V,Rs is 1K and f is 10 Hz to 15.7kHz.
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