2N5641

The 2N5641 is epitaxial silicon NPN-planar trasistor designed primarily for 12.5V AM class C RF amplifiers functional in the aviation band 118-136MHz and for 28V FM class C RF amplifiers utilized in ground station transmitters.

Features of the 2N5641 are:(1)frequency is 175MHz;(2)voltage is 28V;(3)high power out;(4)high power gain;(5)efficiency;(6)class C transistors;(7)common emitter.

The absolute maximum ratings of the 2N5641 can be summarized as:(1):the symbol is VCBO,the parameter is collector-base voltage,the value is 65,the unit is V;(2):the symbol is VCEO,the parameter is collector-emitter voltage,the value is 35,the unit is V;(3):the symbol is VEBO,the parameter is emitter-base voltage,the value is 4.0,the unit is V;(4):the symbol is IC,the parameter is collector current(max.),the value is 1.0,the unit is A;(5):the symbol is PD,the parameter is total dissipation at +25 stud,the value is 15,the unit is W;(6):the symbol is TSTG,the parameter is storage temperature,the value is -65 to +150,the unit is ;(7):the symbol is TJ,the parameter is junction temperature,the value is +200,the unit is .

The electrical characteristics of the 2N5641 can be summarized as:(1):the symbol is BVCEO,the test conditions is IC=200mA,IB=0,the value is 35,the unit is V;(2):the symbol is BVEBO,the test conditions is IE=10mA,IC=0,the value is 4,the unit is V;(3):the symbol is BVCES,the test conditions is IC=200mA,VBE=0,the value is 65,the unit is V;(4):the symbol is ICBO,the test conditions is VCB=30V,IE=0,the value is 1,the unit is mA;(5):the symbol is hFE,the test conditions is VCE=5V,IC=200mA,the min is 5.