2N5681

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 4 V
Packaging : Box
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 30 MHz
Package / Case : TO-39
DC Collector/Base Gain hfe Min : 40 at 250 mA at 2 V


Features:

· SGS-THOMSON PREFERRED SALESTYPES
· NPN TRANSISTOR


Application

·GENERAL PURPOSE SWITCHING
·GENERAL PURPOSE AMPLIFIERS


Specifications

Symbol	Parameter	Value		Unit
		2N5681	2N5682
VCBO	Collector-Base Voltage (IE = 0)	100	120	V
VCEO	Collector-Emitter Voltage (IB = 0)	100	120	V
VEBO	Emitter-Base Voltage (IC = 0)	4		V
IC	Collector Current	1		A
IB	Base Current	0.5		A
Ptot	Total Dissipation at Tc 25	10		W
Ptot	Total Dissipation at Tamb 50	1		W
Tstg	Storage Temperature	-65 to 200
Tj	Max. Operating Junction Temperature	200

Description

The 2N5681, 2N5682 are high voltage silicon epitaxial planar NPN transistors in Jedec TO-39 metal case intended for use as drivers for high power transistors in general purpose, amplifier and switching applications.

The complementary PNP types are the 2N5679 and 2N5680 respectively.