2N5769

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.2 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 40
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	15	V
VCBO	Collector-Base Voltage	40	V
VEBO	Emitter-Base Voltage	4.5	V
IC	Collector Current - Continuous	200	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty
    cycle operations.


Description

This 2N5769 is designed for high speed saturated switching applications at currents to 100 mA. Sourced from Process 21. See PN2369A for characteristics.

Parameters:

Technical/Catalog Information	2N5769
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Current - Collector (Ic) (Max)	200mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	40 @ 10mA, 350mV
Vce Saturation (Max) @ Ib, Ic	200mV @ 1mA, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	400A
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5769 2N5769