2N5770

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Package / Case : TO-92
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 0.05 A
Collector- Emitter Voltage VCEO Max : 15 V
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V
Maximum Operating Frequency : 900 MHz


Specifications

Symbol	Parameter	Value	Units
VCBO	Collector-Emitter Voltage	15	V
VCEO	Collector-Base Voltage	30	V
VEBO	Emitter-Base Voltage	4.5	V
IC	Collector Current - Continuous	50	mA
Tj,Tstg	Operating and Storage Junction Temperature Range	-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.




Parameters:

Technical/Catalog Information	2N5770
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Frequency - Transition	-
Noise Figure (dB Typ @ f)	6dB @ 60MHz
Current - Collector (Ic) (Max)	50mA
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 8mA, 10V
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15V
Gain	15dB
Power - Max	350mW
Compression Point (P1dB)	-
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5770 2N5770