2N5771

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Package / Case : TO-92
Maximum DC Collector Current : 0.2 A
Packaging : Bulk
DC Collector/Base Gain hfe Min : 50
Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 4.5 V
Maximum Operating Frequency : 8.5 MHz


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	15	V
VCBO	Collector-Base Voltage	15	V
VEBO	Emitter-Base Voltage	4.5	V
IC	Collector Current - Continuous	200	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This 2N5771 is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics.

Parameters:

Technical/Catalog Information	2N5771
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	15V
Current - Collector (Ic) (Max)	200mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 10mA, 300mV
Vce Saturation (Max) @ Ib, Ic	150mV @ 100A, 1mA
Frequency - Transition	8.5MHz
Current - Collector Cutoff (Max)	10nA
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2N5771 2N5771