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2N5772

Transistors Bipolar (BJT) NPN Gen Pur SS

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2N5772: Transistors Bipolar (BJT) NPN Gen Pur SS

2N5772 Data Sheet

floor Price/Ceiling Price

US $ .06~.07 / Piece | Get Latest Price
Part Number:
2N5772
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~7500
  • 7500~10000
  • Unit Price
  • $.07
  • $.06
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 15 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.2 A
DC Collector/Base Gain hfe Min : 30 at 30 mA at 0.4 V Configuration : Single
Maximum Operating Frequency : 350 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-106
Packaging : Box    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.2 A
Packaging : Box
Collector- Emitter Voltage VCEO Max : 15 V
Maximum Operating Frequency : 350 MHz
DC Collector/Base Gain hfe Min : 30 at 30 mA at 0.4 V
Package / Case : TO-106


Specifications

Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 5.0 V
IC Collector Current - Continued 300 mA
TSTG Operating and Storage Junction Temperature Range - 55 ~ 150 °C



Parameters:

Technical/Catalog Information2N5772
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)15V
Current - Collector (Ic) (Max)300mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 30mA, 400mV
Vce Saturation (Max) @ Ib, Ic200mV @ 3mA, 30mA
Frequency - Transition-
Current - Collector Cutoff (Max)500nA
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingBulk
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5772
2N5772



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