2N5883

Configuration : Single
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
Maximum Operating Frequency : 4 MHz (Min)
Maximum DC Collector Current : 25 A
DC Collector/Base Gain hfe Min : 35


Specifications

Rating	Symbol	2N5883 2N5885	2N5884 2N5886	Unit
CollectorEmitter Voltage	VCEO	60	80	Vdc
CollectorBase Voltage	VCB	60	80	Vdc
EmitterBase Voltage	VEB	5.0	5.0	Vdc
Collector Current - Continuous Peak	IC	25 50	25 50	Adc
Base Current	IB	7.5	7.5	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	200 1.15	200 1.15	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +200	65 to +200

Parameters:

Technical/Catalog Information	2N5883
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	25A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 10A, 4V
Vce Saturation (Max) @ Ib, Ic	1V @ 1.5A, 15A
Frequency - Transition	4MHz
Current - Collector Cutoff (Max)	2mA
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5883 2N5883 2N5883OS ND 2N5883OSND 2N5883OS