Transistors Bipolar (BJT) 25A 80V 200W NPN
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| Transistor Polarity : | NPN | Collector- Emitter Voltage VCEO Max : | 80 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 25 A |
| DC Collector/Base Gain hfe Min : | 20 | Configuration : | Single |
| Maximum Operating Frequency : | 4 MHz (Min) | Maximum Operating Temperature : | + 200 C |
| Mounting Style : | Through Hole | Package / Case : | TO-204 |
| Packaging : | Tray |
| Technical/Catalog Information | 2N5886G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 80V |
| Current - Collector (Ic) (Max) | 25A |
| Power - Max | 200W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 10A, 4V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1.5A, 15A |
| Frequency - Transition | 4MHz |
| Current - Collector Cutoff (Max) | 2mA |
| Mounting Type | Chassis Mount |
| Package / Case | TO-204, TO-3 |
| Packaging | Tray |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N5886G 2N5886G 2N5886GOS ND 2N5886GOSND 2N5886GOS |