2N5961

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Package / Case : TO-92
Maximum Operating Frequency : 100 MHz
Packaging : Box
Emitter- Base Voltage VEBO : 8 V
Maximum DC Collector Current : 0.05 A
DC Collector/Base Gain hfe Min : 100 at 10 uA at 5 V


Specifications

SYMBOL	PARAMETER	Val60ue	UNIT
VCBO	Collector-Emitter Voltage	60	V
VCEO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Voltage	7.0	V
IC	Collector Current - Continuous	100	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150

Description

This 2N5961 is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

Parameters:

Technical/Catalog Information	2N5961
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	100mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic	200mV @ 500A, 10mA
Frequency - Transition	-
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N5961 2N5961