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2N5962_D26Z

Transistors Bipolar (BJT) NPN Transistor General Purpose

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2N5962_D26Z: Transistors Bipolar (BJT) NPN Transistor General Purpose

2N5962_D26Z Data Sheet

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Part Number:
2N5962_D26Z
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 45 V
Emitter- Base Voltage VEBO : 8 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 450 at 10 uA at 5 V Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-92 Packaging : Reel    

Description

Maximum Operating Frequency :
Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : Through Hole
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 45 V
Maximum DC Collector Current : 0.1 A
Emitter- Base Voltage VEBO : 8 V
DC Collector/Base Gain hfe Min : 450 at 10 uA at 5 V


Parameters:

Technical/Catalog Information2N5962_D26Z
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)45V
Current - Collector (Ic) (Max)100mA
Power - Max625mW
DC Current Gain (hFE) (Min) @ Ic, Vce600 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic200mV @ 500A, 10mA
Frequency - Transition-
Current - Collector Cutoff (Max)-
Mounting TypeThrough Hole
Package / CaseTO-92
PackagingTape & Reel (TR)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names 2N5962_D26Z
2N5962_D26Z



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