2N6341

Transistor Polarity : NPN
Configuration : Single
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Temperature : + 200 C
Package / Case : TO-204
Packaging : Tray
DC Collector/Base Gain hfe Min : 50
Maximum DC Collector Current : 25 A
Maximum Operating Frequency : 40 MHz (Min)
Collector- Emitter Voltage VCEO Max : 150 V


Application

·For use in industrial-military power amplifier and switching circuit applications




Specifications

SYMBOL	PARAMETER	CONDITIONS	RATING	UNIT
VCBO	Collector to base voltage 2N6338 2N6339 2N6340 2N6341	Open emitter	120 140 160 180	V
VCEO	Collector to emitter voltage 2N6338 2N6339 2N6340 2N6341	Open base	120 140 150 100	V
VEBO	Emitter to base voltage	Open collector	6	V
IC	Collector current		25	A
ICM	Collector current-peak		50	A
IBC	Base current		10
PD	Total Power Dissipation	Tc=25	200	W
Tj	Junction temperature		200
Tstg	Storage temperaturerange		-65 ~+200

Description

2N6341 features

·With TO-3 package
·Fast switching times
·Low collector saturation voltage
·Complement to type 2N6436~38

Parameters:

Technical/Catalog Information	2N6341
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	150V
Current - Collector (Ic) (Max)	25A
Power - Max	200W
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10A, 2V
Vce Saturation (Max) @ Ib, Ic	1V @ 1A, 10A
Frequency - Transition	40MHz
Current - Collector Cutoff (Max)	50A
Mounting Type	Chassis Mount
Package / Case	TO-204, TO-3
Packaging	Tray
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6341 2N6341