On-State RMS Current (It RMS)
:
Rated Repetitive Off-State Voltage VDRM
: 600 V
Gate Trigger Current (Igt)
: 50 mA
Mounting Style
: Through Hole
Package / Case
: TO-220AB
Off-State Leakage Current @ VDRM IDRM
: 0.01 mA
Gate Trigger Voltage (Vgt)
: 2 V
Packaging
: Box
Holding Current (Ih Max)
: 40 mA
Breakover Current IBO Max
: 100 A
Features: • Blocking Voltage to 800 V
• All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability
• Gate Triggering Guaranteed in all Four Quadrants
• For 400 Hz Operation, Consult Factory
• Pb−Free Package is Available*
Specifications
| Rating |
Symbol |
Value |
Unit |
†Peak Repetitive Off−State Voltage (Note 1)
(TJ = −40 to +110°C, Sine Wave
50 to 60 Hz, Gate Open) 2N6344
2N6349 |
VDRM,
VRRM |
600
800 |
V |
†On−State RMS Current (TC = +80°C) Full
Cycle Sine Wave 50 to 60 Hz (TC = +90°C) |
IT(RMS) |
8.0
4.0 |
A |
†Peak Non−Repetitive Surge Current (One
Full Cycle, Sine Wave 60 Hz, TC = +25°C)
Preceded and followed by rated current |
ITSM |
100 |
A |
| Circuit Fusing Consideration (t = 8.3 ms) |
I2t |
40 |
A2s |
†Peak Gate Power
(TC = +80°C, Pulse Width = 2 s) |
PGM |
20 |
W |
†Average Gate Power
(TC = +80°C, t = 8.3 ms) |
PG(AV) |
0.5 |
W |
†Peak Gate Current
(TC = +80°C, Pulse Width = 2.0 s) |
IGM |
2.0 |
A |
†Peak Gate Voltage
(TC = +80°C, Pulse Width = 2.0 s) |
VGM |
10 |
V |
| †Operating Junction Temperature Range |
TJ |
−40 to +125 |
|
| Storage Temperature Range |
Tstg |
−40 to +150 |
|
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
†Indicates JEDEC Registered Data.
1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
Description2N6344G Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full−wave silicon gate controlled solid−state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied main terminal voltage with positive or negative gate triggering.
Parameters: | Technical/Catalog Information | 2N6344G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Triac Type | Standard |
| Configuration | Single |
| Voltage - Off State | 600V |
| Current - On State (It (RMS)) (Max) | 8A |
| Voltage - Gate Trigger (Vgt) (Max) | 2V |
| Current - Gate Trigger (Igt) (Max) | 50mA |
| Current - Hold (Ih) (Max) | 40mA |
| Current - Non Rep. Surge 50, 60Hz (Itsm) | 100A @ 60Hz |
| Mounting Type | Through Hole |
| Package / Case | TO-220AB |
| Packaging | Bulk |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 2N6344G
2N6344G
2N6344GOS ND
2N6344GOSND
2N6344GOS
|
2N6344G Data Sheet
