2N6386, US $ .53-.59 , Central Semiconductor, 2N6386 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00209747 Detail

2N6386: Transistors Bipolar (BJT) NPN Pwr Darlington

2N6386 Data Sheet

US $ .53~.59 / Piece | Get Latest Price

Part Number:: 2N6386
Mfg:: Central Semiconductor
Supply Ability:: 5000

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Upload time: 2025/12/28

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Recent History
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Product Details

Quick Details

Transistor Polarity :	NPN	Collector- Emitter Voltage VCEO Max :	40 V
Maximum DC Collector Current :	8 A	DC Collector/Base Gain hfe Min :	100
Maximum Operating Frequency :	20 MHz	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Box

Description

Emitter- Base Voltage VEBO :
Configuration :
Maximum Operating Temperature :
Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Mounting Style : Through Hole
Maximum DC Collector Current : 8 A
Collector- Emitter Voltage VCEO Max : 40 V
Packaging : Box
Package / Case : TO-220
Maximum Operating Frequency : 20 MHz

Application

·Designed for general-purpose amplifier
and low speed switching applications

Specifications

SYMBOL	PARAMETER		CONDITIONS	Value	UNIT
V_CBO	Collector-base voltage	2N6386	Open emitter	40	V
		2N6387		60
		2N6388		80
V_CEO	Collector-emitter voltage	2N6386	Open base	40	V
		2N6387		60
		2N6388		80
V_EBO	Emitter-base voltage		Open collector	5	V
I_C	Collector Current	2N6386		8	A
		2N6387 2N6388		10
I_CM	Collector current-Pulse			15
I_B	Base current-DC			0.25	A
P_C	Collector dissipation		Tc=25	65	W
T_j	Junction temperature			150
T_STG	Storage temperature			-65 to +150

Description

·2N6386 With TO-220C package
·Complement to type 2N6666/6667/6668
·DARLINGTON
·High DC current gain
·Low collector saturation voltage

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2N6386

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