2N6476, US $ .62-.71 , Central Semiconductor, 2N6476 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00206524 Detail

2N6476: Transistors Bipolar (BJT) PNP Med Power

2N6476 Data Sheet

US $ .62~.71 / Piece | Get Latest Price

Part Number:: 2N6476
Mfg:: Central Semiconductor
Supply Ability:: 5000

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0~1
1~25
25~100
100~250

Unit Price
$.71
$.67
$.64
$.62

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15 Days
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Upload time: 2024/4/24

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Recent History
What is this?

2N6400 evaluate
THYRISTOR SCR 16A 50V TO-220AB
2N6400G evaluate
US $.47 - .91 / Piece

SCRs 50V 16A
2N6401 evaluate
SCRs 100V 16A

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	120 V
Emitter- Base Voltage VEBO :	5 V	Maximum DC Collector Current :	4 A
DC Collector/Base Gain hfe Min :	15	Maximum Operating Frequency :	5 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220	Packaging :	Box

Description

Configuration :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Maximum DC Collector Current : 4 A
Emitter- Base Voltage VEBO : 5 V
DC Collector/Base Gain hfe Min : 15
Packaging : Box
Package / Case : TO-220
Collector- Emitter Voltage VCEO Max : 120 V
Maximum Operating Frequency : 5 MHz

Application

·General-purpose medium power for switching and amplifier applications

Specifications

SYMBOL	PARAMETER		CONDITIONS	Value	UNIT
V_CBO	Collector-base voltage	2N6475	Open emitter	-110	V
V_CBO	Collector-base voltage	2N6476	Open emitter	-130	V
V_CEO	Collector-emitter voltage	2N6475	Open base	-100	V
V_CEO	Collector-emitter voltage	2N6476	Open base	-120	V
V_EBO	Emitter-base voltage		Open collector	-5	V
I_C	Collector Current			-4	A
I_B	Base current			-2	A
P_T	Total power dissipation		TC=25	40	W
T_j	Junction temperature			150
T_STG	Storage temperature			-55 to +150

Description

·2N6476 With TO-220 package
·Low collector saturation voltage
·Excellent safe operating area

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2N6476

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