2N6506

Features: • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability• Blocking Voltage to 800 Volts• 300 A Surge Current Capability...

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2N6506 Picture
SeekIC No. : 004219492 Detail

2N6506: Features: • Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat D...

floor Price/Ceiling Price

Part Number:
2N6506
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Description



Features:

• Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability
• Blocking Voltage to 800 Volts
• 300 A Surge Current Capability
• Device Marking: Logo, Device Type, e.g., 2N6504, Date Code




Specifications

Rating
Symbol
Value
Unit
*Peak Repetitive OffState Voltage (Note 1.)
(Gate Open, Sine Wave 50 to 60 Hz,
TJ = 25 to 125°C)
2N6504
2N6505
2N6507
2N6508
2N6509
VDRM.
Volts
VRRM
50
100
400
600
800
On-State RMS Current
(180° Conduction Angles; TC = 85°C)
IT(RMS)
25
A
Average On-State Current
(180° Conduction Angles; TC = 85°C)
IT(AV)
16
A
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, TJ = 100°C)
ITSM
250
A
Forward Peak Gate Power
(Pulse Width 1.0s, TC = 85°C)
PGM
20
Watts
Forward Average Gate Power
(t = 8.3 ms, TC = 85°C)
PG(AV)
0.5
Watt
Forward Peak Gate Current
(Pulse Width 1.0s, TC = 85°C)
IGM
2.0
A
Operating Junction Temperature Range
TJ
40 to+125
°C
Storage Temperature Range
Tstg
40 to+150
°C


*Indicates JEDEC Registered Data
1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




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