2N6517

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Emitter- Base Voltage VEBO : 6 V
Mounting Style : Through Hole
Maximum Operating Frequency : 200 MHz
Package / Case : TO-92
Maximum DC Collector Current : 0.5 A
Packaging : Bulk
Collector- Emitter Voltage VCEO Max : 350 V
DC Collector/Base Gain hfe Min : 20 at 1 mA at 10 V


Features:

· 350 Volt VCEO
· Gain of 15 at IC=100mA




Specifications

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Base Voltage	VCBO	350	V
Collector-Emitter Voltage	VCEO	350	V
Emitter-Base Voltage	VEBO	6	V
Base Current	IB	250	mA
Continuous Collector Current	IC	500	mA
Power Dissipation at Tamb = 25°C	Ptot	680	mW
Operating and Storage Temperature Range	Tj:Tstg	-55 to +200	°C

Parameters:

Technical/Catalog Information	2N6517
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	350V
Current - Collector (Ic) (Max)	500mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic	300mV @ 1mA, 10mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6517 2N6517 2N6517OS ND 2N6517OSND 2N6517OS