2N6660

MOSFET 60V 3Ohm

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2N6660 Picture
SeekIC No. : 00151338 Detail

2N6660: MOSFET 60V 3Ohm

floor Price/Ceiling Price

US $ 1.3~1.76 / Piece | Get Latest Price
Part Number:
2N6660
Mfg:
Supertex
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~100
  • 100~500
  • 500~1000
  • Unit Price
  • $1.76
  • $1.46
  • $1.35
  • $1.3
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/3/27

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.41 A
Resistance Drain-Source RDS (on) : 3 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-39 Packaging : Bag    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 3 Ohms
Continuous Drain Current : 0.41 A
Packaging : Bag
Package / Case : TO-39


Features:

Low On-Resistance: 1.3
Low Threshold: 1.7 V
Low Input Capacitance: 35 pF
Fast Switching Speed: 8 ns
Low Input and Output Leakage





Application

Direct Logic-Level Interface: TTL/CMOS
Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Battery Operated Systems
Solid-State Relays





Pinout

  Connection Diagram




Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
2N6660
Single
Total Quad
Unit
VQ1004J
VQ1004P
VQ1004J/P
Drain-Source Voltage
VDS
60
60
60

V
Gate-Source Voltage-Non-Repetitive
VGSM
±30
±30
±30

Gate-Source Voltage-Continuous
VGS
±20
±20
±20

Continuous Drain Currentd
(TJ = 175)
TC = 25
ID
0.46
0.46
0.46

A
TC= 125
0.26
0.26
0.26

Pulsed Drain Current
IDM
2
2
2

Power Dissipation TC= 25
PD
1.3
1.3
1.3
2
W
TC = 25
0.52
0.52
0.52
0.8
Thermal Resistance, Junction-to-Ambient
RthJA
96
96
96
62.5
/W
Thermal Resistance, Junction-to-Case
RthJA
20
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 155





Description

The 2N6660 is designed as one kind of enhancement-mode (normally-off) transistor that can be used in (1)motor controls; (2)converters; (3)amplifiers; (4)switches; (5)power supply circuits; (6)drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.). Features of the 2N6660 are:(1)free from secondary breakdown; (2)low power drive requirement; (3)ease of paralleling; (4)low CISS and fast switching speeds; (5)excellent thermal stability; (6)integral source-drain diode; (7)high input impedance and high gain; (8)complementary N- and P-channel devices.

The absolute maximum ratings of the 2N6660 can be summarized as:(1)Drain-to-Source Voltage: BVDSS;(2)Drain-to-Gate Voltage: BVDGS;(3)Gate-to-Source Voltage: ±20 V;(4)Operating and Storage Temperature: -55°C to +150°C;(5)Soldering Temperature: 300°C.

The electrical characteristics of 2N6660 can be summarized as:(1)Gate Threshold Voltage: 0.8 to 2.0 V;(2)Change in VGS(th) with Temperature: -3.8 to -5.5 mV/°C;(3)Gate Body Leakage: 100 nA;(4)ON-State Drain Current: 1.5 A;(5)Forward Transconductance: 170 m;(6)Input Capacitance: 50 pF;(7)Common Source Output Capacitance: 40 pF;(8)Reverse Transfer Capacitance: 10 pF;(9)Turn-ON Time: 10 ns;(10)Turn-OFF Time: 10 ns. If you want to know more information such as the electrical characteristics about it, please download the datasheet in www.seekic.com or www.chinaicmart.com.






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