2N6667

Emitter- Base Voltage VEBO :
Configuration :
Maximum Operating Temperature :
DC Collector/Base Gain hfe Min : 100
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Packaging : Box
Package / Case : TO-220
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 20 MHz


Specifications

Rating	Symbol	2N6667	2N6668	Unit
CollectorEmitter Voltage	VCEO	60	80	Vdc
CollectorBase Voltage	VCB	60	80	Vdc
EmitterBase Voltage	VEB	5	5	Vdc
Collector Current - Continuous Peak	IC	10 15	10 15	Adc
Base Current	IB	250	250	Adc
Total Device Dissipation @ TC = 25 Derate above 25	PD	65 0.52	65 0.52	Watts W/
Operating and Storage Junction Temperature Range	TJ, Tstg	65 to +150	65 to +150

Parameters:

Technical/Catalog Information	2N6667
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	10A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 10mA, 5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6667 2N6667 2N6667OS ND 2N6667OSND 2N6667OS