2N6668

Emitter- Base Voltage VEBO :
Configuration :
Maximum Operating Temperature :
DC Collector/Base Gain hfe Min : 100
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 80 V
Packaging : Box
Package / Case : TO-220
Maximum DC Collector Current : 10 A
Maximum Operating Frequency : 20 MHz


Features:

· SGS-THOMSON PREFERRED SALESTYPE
· PNP DARLINGTON
· INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE

Application

· GENERAL PURPOSE SWITCHING
· GENERAL PURPOSE SWITCHING AND AMPLIFIER

Specifications

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage (IE= 0))	80	V
VCEO	emitter-base voltage(IB = 0)	80	V
VEBO	Emitter-Base Voltage (IC = 0)	5	V
IC	Collector and Emit ter Current	10	A
ICM	Collector Peak Current	15	A
IB	Base Current	250	mA
Ptot	Total Dissipation at TC 25 °C	65	W
Tstg	Storage Temperature	-65 to 150	°C
Tj	Max. Operating Junction Temperature	150	°C

For PNP type voltage and current values are negative.

Parameters:

Technical/Catalog Information	2N6668
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	PNP - Darlington
Voltage - Collector Emitter Breakdown (Max)	80V
Current - Collector (Ic) (Max)	10A
Power - Max	65W
DC Current Gain (hFE) (Min) @ Ic, Vce	1000 @ 5A, 3V
Vce Saturation (Max) @ Ib, Ic	3V @ 100mA, 10A
Frequency - Transition	-
Current - Collector Cutoff (Max)	1mA
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	2N6668 2N6668 497 2535 5 ND 49725355ND 497-2535-5