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2N6718

Transistors Bipolar (BJT) NPN Med Power

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SeekIC No. : 00213015 Detail

2N6718: Transistors Bipolar (BJT) NPN Med Power

2N6718 Data Sheet

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Part Number:
2N6718
Mfg:
Central Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 2 A
DC Collector/Base Gain hfe Min : 50 Maximum Operating Frequency : 50 MHz
Mounting Style : SMD/SMT Package / Case : TO-237
Packaging : Box    

Description

Configuration :
Maximum Operating Temperature :
Transistor Polarity : NPN
Mounting Style : SMD/SMT
Collector- Emitter Voltage VCEO Max : 100 V
Emitter- Base Voltage VEBO : 5 V
Packaging : Box
DC Collector/Base Gain hfe Min : 50
Maximum Operating Frequency : 50 MHz
Maximum DC Collector Current : 2 A
Package / Case : TO-237


Features:

· 100 Volt VCEO
· Gain of 20 at IC = 0.5 Amp
· Ptot=1 Watt


Specifications

PARAMETER
SYMBOL
2N6716
2N6717
2N6718
UNIT
Collector-Base Voltage
VCBO
60
80
100
V
Collector-Emitter Voltage
VCEO
60
80
100
V
Emitter-Base Voltage
VEBO
5
V
Peak Pulse Current
ICM
2
A
Continuous Collector Current
IC
1
A
Power Dissipation at Tamb = 25°C
Ptot
1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C



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