2N6729

Packaging :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 500 MHz
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V


Features:

· 100 Volt VCEO
· Gain of 20 at IC = 0.5 Amp
· P_tot=1 Watt


Specifications

PARAMETER	SYMBOL	2N6728	2N6729	2N6730	UNIT
Collector-Base Voltage	VCBO	-60	-80	-100	V
Collector-Emitter Voltage	VCEO	-60	-80	-100	V
Emitter-Base Voltage	VEBO	-5			V
Peak Pulse Current	ICM	-2			A
Continuous Collector Current	IC	-1			A
Power Dissipation at Tamb = 25°C	Ptot	-1			W
Operating and Storage Temperature Range	Tj:Tstg	-55 to +200			°C