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2N6729

Transistors Bipolar (BJT) -

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SeekIC No. : 00216010 Detail

2N6729: Transistors Bipolar (BJT) -

2N6729 Data Sheet

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Part Number:
2N6729
Mfg:
Diodes Inc. / Zetex
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/4

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Product Details

Quick Details

Transistor Polarity : PNP Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 1 A
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V Configuration : Single
Maximum Operating Frequency : 500 MHz Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole Package / Case : TO-92    

Description

Packaging :
Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Collector- Emitter Voltage VCEO Max : 80 V
Maximum DC Collector Current : 1 A
Maximum Operating Frequency : 500 MHz
DC Collector/Base Gain hfe Min : 80 at 50 mA at 1 V


Features:

· 100 Volt VCEO
· Gain of 20 at IC = 0.5 Amp
· Ptot=1 Watt


Specifications

PARAMETER
SYMBOL
2N6728
2N6729
2N6730
UNIT
Collector-Base Voltage
VCBO
-60
-80
-100
V
Collector-Emitter Voltage
VCEO
-60
-80
-100
V
Emitter-Base Voltage
VEBO
-5
V
Peak Pulse Current
ICM
-2
A
Continuous Collector Current
IC
-1
A
Power Dissipation at Tamb = 25°C
Ptot
-1
W
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C



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