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2N6976

Features: • 5A, 400V and 500V• VCE(ON) 2V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplies• Motor Drives• Protection CircuitsSpecifications 2N6975/2N6977 2N6976/2N6978 (Note 1) (Note ...

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SeekIC No. : 004219587 Detail

2N6976: Features: • 5A, 400V and 500V• VCE(ON) 2V• TFI 1ms, 0.5ms• Low On-State Voltage• Fast Switching Speeds• High Input ImpedanceApplication• Power Supplies̶...

2N6976 Data Sheet

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Part Number:
2N6976
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 5A, 400V and 500V
• VCE(ON) 2V
• TFI 1ms, 0.5ms
• Low On-State Voltage
• Fast Switching Speeds
• High Input Impedance


Application

• Power Supplies
• Motor Drives
• Protection Circuits


Specifications

                                                                                                         2N6975/2N6977  2N6976/2N6978
                                                                                                                   (Note 1)        (Note 1)         UNITS
Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .  . . . . .VCES       400             500                   V
Collector-Gate Voltage (RGE = 1MW) . . . . . . . . . . . . . . . . . . . . . .  .VCGR      400             500                   V
Reverse Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . .VCES(REV.)       5                   5                   V
Gate-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGE      ±20            ±20                  V
Collector Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC         5                 5                    A
Collector Current Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM         10               10                   A
Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . PD        100             100                 W
Power Dissipation Derating TC > +25oC 0.8 0.8 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . .TJ, TSTG   -55 to +150  -55 to +150       oC


Description

The 2N6975, 2N6976, 2N6977 and the 2N6978 are n-channel enhancement-mode insulated gate bipolar transistors (IGBTs) designed for high-voltage, low on-dissipation applications such as switching regulators and motor drivers. These types can be operated directly from low-power integrated circuits.




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