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2N7622U2

Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface MountLight WeightSpecifications Parameter Max. Units ID @VGS = -4.5V,TC = 25 Con...

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SeekIC No. : 004219640 Detail

2N7622U2: Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface...

2N7622U2 Data Sheet

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Part Number:
2N7622U2
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/23

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Product Details

Description



Features:

5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
 Light Weight


Specifications

  Parameter
Max.
Units
ID @VGS = -4.5V,TC = 25
 Continuous Drain Current
-56*
A
ID @VGS = -4.5V,TC = 100
 Continuous Drain Current
-56*
IDM
 Pulsed Drain Current
-224
PD @TC = 25
 Max. Power Dissipation
250
W
 Linear Derating Factor
2.0
W/
VGS
 Gate-to-Source Voltage
±10
V
EAS
 Single Pulse Avalanche Energy
1060
mJ
IAR
 Avalanche Current
-56
A
EAR
 Repetitive Avalanche Energy
25
mJ
dv/dt
 Peak Diode Recovery dv/dt
-3.7
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 (for 5s)
  Weigh
3.3 (Typical)
g

 




Description

International Rectifier's R7TM Logic Level Power MOSFETs 2N7622U2 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

2N7622U2 is used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.




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