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Part Number: 2N7622U2
Description: International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfa...


Description: International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfa...
International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
| Parameter |
Max. |
Units | |
|
ID @VGS = -4.5V,TC = 25 |
Continuous Drain Current |
-56* |
A |
|
ID @VGS = -4.5V,TC = 100 |
Continuous Drain Current |
-56* | |
|
IDM |
Pulsed Drain Current |
-224 | |
|
PD @TC = 25 |
Max. Power Dissipation |
250 |
W |
| Linear Derating Factor |
2.0 |
W/ | |
|
VGS |
Gate-to-Source Voltage |
±10 |
V |
|
EAS |
Single Pulse Avalanche Energy |
1060 |
mJ |
|
IAR |
Avalanche Current |
-56 |
A |
|
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
|
dv/dt |
Peak Diode Recovery dv/dt |
-3.7 |
V/ns |
|
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
| Pckg. Mounting Surface Temp. |
300 (for 5s) | ||
| Weigh |
3.3 (Typical) |
g |
2N7000
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