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Part Number: 2N7622U2

 

 

 

 

Description: International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfa...


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2N7622U2 General Description


International Rectifier's R7TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.

2N7622U2 Maximum Ratings

  Parameter
Max.
Units
ID @VGS = -4.5V,TC = 25
Continuous Drain Current
-56*
A
ID @VGS = -4.5V,TC = 100
Continuous Drain Current
-56*
IDM
Pulsed Drain Current
-224
PD @TC = 25
Max. Power Dissipation
250
W
Linear Derating Factor
2.0
W/
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
1060
mJ
IAR
Avalanche Current
-56
A
EAR
Repetitive Avalanche Energy
25
mJ
dv/dt
Peak Diode Recovery dv/dt
-3.7
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp.
300 (for 5s)
  Weigh
3.3 (Typical)
g

 

2N7622U2 Features

5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Package
Surface Mount
 Light Weight

2N7622U2 datasheet

2N7000
PDF/DataSheet Download

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