2N918

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : Through Hole
Packaging : Box
Emitter- Base Voltage VEBO : 3 V
Maximum DC Collector Current : 0.05 A
Collector- Emitter Voltage VCEO Max : 15 V
DC Collector/Base Gain hfe Min : 20 at 3 mA at 1 V
Maximum Operating Frequency : 600 MHz
Package / Case : TO-72


Features:

• Hermetically sealed TO-72 metal can
• Also available in chip configuration
• Chip geometry 0003
• Reference document: MIL-PRF-19500/301


Application

• Ultra-high frequency transistor
• Low power
• NPN silicon transistor


Specifications

Parameter	Symbol	Rating	Unit
Collector-Emitter Voltage	VCEO	15	Volts
Collector-Base Voltage	VCBO	30	Volts
Emitter-Base Voltage	VEBO	3	Volts
Collector Current, Continuous	IC	50	mA
Power Dissipation, TA = 25°C Derate linearly above 25°C	PT	200 1.14	mW mW/°C
Operating Junction Temperature Storage Temperature	TJ TSTG	-65 to +200	°C

Description

Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N918J)
• JANTX level (2N918JX)
• JANTXV level (2N918JV)
• JANS level (2N918JS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method 2072 for JANTXV and JANS
• Radiation testing (total dose) upon request