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2PC4617J

Features: • Power dissipation comparable to SOT23• Low output capacitance• Low saturation voltage VCEsat• Low current (max. 100 mA)• Low voltage (max. 50 V).Application• General purpose switching and amplification in miniaturized application areas such as teleco...

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SeekIC No. : 004219670 Detail

2PC4617J: Features: • Power dissipation comparable to SOT23• Low output capacitance• Low saturation voltage VCEsat• Low current (max. 100 mA)• Low voltage (max. 50 V).Application...

2PC4617J Data Sheet

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Part Number:
2PC4617J
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/17

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Product Details

Description



Features:

• Power dissipation comparable to SOT23
• Low output capacitance
• Low saturation voltage VCEsat
• Low current (max. 100 mA)
• Low voltage (max. 50 V).


Application

• General purpose switching and amplification in miniaturized application areas such as telecom and multimedia. 


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − 50 V
VCEO collector-emitter voltage open base − 50 V
VEBO emitter-base voltage open collector − 5 V
IC collector current (DC)   − 100 mA
ICM peak collector current   − 200 mA
IBM peak base current   − 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 − 250 mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 150 °C
Tamb operating ambient temperature   −65 +150 °C



Description

NPN transistor encapsulated in an ultra small plastic
SMD SC-89 (SOT490) package.
PNP complement: 2PA1774J.


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