2SA1015-GR(F,T), US $ .04-.04, 2SA1015-GR(F,T) DataSheet download, circuit diagram from SeekIC.com

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2SA1015-GR(F,T): TRANS PNP 50V 150MA TO-92

2SA1015-GR(F,T) Data Sheet

US $ .04~.04 / Piece | Get Latest Price

Part Number:: 2SA1015-GR(F,T)
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Supply Ability:: 5000

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Product Details

Quick Details

Series:	-	Manufacturer:	Toshiba
Transistor Type:	PNP	Current - Collector (Ic) (Max):	150mA
Voltage - Collector Emitter Breakdown (Max):	50V	Resistor - Base (R1) (Ohms):	-
Vce Saturation (Max) @ Ib, Ic:	300mV @ 10mA, 100mA	Current - Collector Cutoff (Max):	-
Resistor - Emitter Base (R2) (Ohms):	-	Series :	ESD5V0S
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 2mA, 6V	Power - Max:	400mW
Frequency - Transition:	80MHz	Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)	Supplier Device Package:	TO-92

Description

Series: -
Resistor - Base (R1) (Ohms): -
Current - Collector Cutoff (Max): -
Resistor - Emitter Base (R2) (Ohms): -
Transistor Type: PNP
Frequency - Transition: 80MHz
Current - Collector (Ic) (Max): 150mA
Voltage - Collector Emitter Breakdown (Max): 50V
Mounting Type: Through Hole
Supplier Device Package: TO-92
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Power - Max: 400mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tube
Manufacturer: Toshiba

Parameters:

Technical/Catalog Information	2SA1015-GR(F,T)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Power - Max	400mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2mA, 6V
Vce Saturation (Max) @ Ib, Ic	300mV @ 10mA, 100mA
Frequency - Transition	80MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	TO-92
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SA1015 GR F,T 2SA1015GRF,T

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2SA1015-GR(F,T)

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