Transistors Bipolar (BJT) 1W High Current PNP
2SA1020G: Transistors Bipolar (BJT) 1W High Current PNP
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| Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 50 V |
| Emitter- Base Voltage VEBO : | 5 V | Maximum DC Collector Current : | 2 A |
| DC Collector/Base Gain hfe Min : | 70 at 500 mA at 2 V | Configuration : | Single |
| Maximum Operating Frequency : | 100 MHz (Min) | Maximum Operating Temperature : | + 150 C |
| Mounting Style : | Through Hole | Package / Case : | TO-92 |
| Packaging : | Bulk |
| Rating | Symbol | Value | Unit |
| Collector−Emitter Voltage | VCE | 50 | Vdc |
| Collector−Base Voltage | VCB | 50 | Vdc |
| Emitter −Base Voltage | VEB | 5.0 | Vdc |
| Collector Current − Continuous | IC | 2.0 | Adc |
| Total Power Dissipation @ TA = 25°C Derate above 25°C |
PD | 900 5.0 |
mW mW/°C |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD | 1.5 12 |
W mW/°C |
| Operating and Storage Junction Temperature Range |
TJ, Tstg | −55 to +150 |