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2SA1150

Application• High hFE: hFE = 100~320• Complementary to 2SC2710.Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitter voltage VCEO −30 V Emitter-base voltage VEBO −5 V Collector current IC ...

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2SA1150: Application• High hFE: hFE = 100~320• Complementary to 2SC2710.Specifications Characteristics Symbol Rating Unit Collector-base voltage VCBO −35 V Collector-emitte...

2SA1150 Data Sheet

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Part Number:
2SA1150
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

• High hFE: hFE = 100~320
• Complementary to 2SC2710.


Specifications

Characteristics Symbol Rating Unit
Collector-base voltage VCBO −35 V
Collector-emitter voltage VCEO −30 V
Emitter-base voltage VEBO −5 V
Collector current IC −800 mA
Base current IB −160 mA
Collector power dissipation PC 300 mW
Junction temperature Tj 150
Storage temperature range Tstg −55~150

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).


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