Application·High power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base Voltage Open emitter -50 V VCBO Collector-emitter Voltage Open base -50 V VEBO Emitter-Base Voltage Open collector -5 V IC Collector current-DC...
2SA1185: Application·High power amplifier applicationsSpecifications SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base Voltage Open emitter -50 V VCBO Collector-emitter Voltage ...
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| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT |
| VCBO | Collector-base Voltage | Open emitter | -50 | V |
| VCBO | Collector-emitter Voltage | Open base | -50 | V |
| VEBO | Emitter-Base Voltage | Open collector |
-5 |
V |
| IC | Collector current-DC | -7 | A | |
| ICM | Collector current-peak | -15 | A | |
| IBM | Base current-peak | -5 | ||
| PC | Collector power dissipation | TC=25 | 60 | W |
| TJ | Junction Temperature | 150 | ||
| Tstg | Storage Temperature Range | -55~150 |
The 2SA1185 features:
·With TO-3PN package
·High current capability
·Low collector saturation voltage