MFG:N/A Package Cooled:NA/ D/C:09+
MFG: N/A
Package Cooled: NA/
D/C: 09+
Description: ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)·Good Linearity of hFE·Complement to ...
| SYMBOL | PARAMETER | VALUE | UNIT |
| VCBO | Collector-base Voltage | -160 | V |
| VCBO | Collector-emitter Voltage | -160 | V |
| VEBO | Emitter-Base Voltage | -5 | V |
| IC | Collector current | -15 | A |
| IB | Base current | -4 | A |
| PC | Collector Power Dissipation @ TC=25 |
130 | W |
| TJ | Junction Temperature | 150 | |
| Tstg | Storage Temperature Range | -55~150 |
2SA0683
PDF/DataSheet Download
The 2SA1383 features: ·With TO-220 package Fig.1 simplified outline (TO-220) and symbol·Complement to type 2SC3514·High transition frequency
The 2SA1382 is a PNP silicon epitaxial palanr type transistors. Features of the 2SA1382 are:(1)high DC current gain:hFE=150~400(LC=-0.5A);(2)low saturation voltage:VCE(sat)=-0.5V(MAX.)(IC=-1A);(3)high speed switching:Tstg=1.0s(TYP.). The absolute maximum r...
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