Features: Adoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching SpeedPinoutSpecifications Parameter Symbol Ratings Unit Collector-Emitter Voltage VCEO -180 V Collector-Base Voltage VCBO -160 V Emitter-Base Voltage ...
2SA1418: Features: Adoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching SpeedPinoutSpecifications Parameter Symbol Ratings Unit Collector-Emitter V...
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| Parameter |
Symbol |
Ratings |
Unit |
| Collector-Emitter Voltage |
VCEO |
-180 |
V |
| Collector-Base Voltage |
VCBO |
-160 |
V |
| Emitter-Base Voltage |
VEBO |
-6 |
V |
| Collector Current (DC) |
IC |
-0.7 |
A |
| Collector Current (Pulse) |
ICP |
-1.5 | |
| Power Dissipation |
PC PC * |
500 1.3 |
mW W |
| Junction Temperature |
Tj |
150 |
|
| Storage Temperature |
Tstg |
-55 to 150 |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 180 |
| VCEO [V] | 160 |
| IC [A] | 0.7 |
| PC [W] | 1.3 |
| Electrical characteristics | |
|---|---|
| hFE min | 100 |
| hFE max | 400 |
| VCE [V] | 5 |
| IC [mA] | 100 |
| fT typ [MHz] | 120 |
| VCE [V] | 10 |
| IC [mA] | 50 |
| VCE (sat) typ [V] | 0.2 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 250 |
| IB [mA] | 25 |