Features: · Adoption of MBIT process.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low colletor-to-emitter saturation voltage (VCE(sat)£0.5V max).· High VEBO (VEBO³15V).Application· Low frequency general-purpose amplifiers, drivers, muting circuits.PinoutSpecificat...
2SA1435: Features: · Adoption of MBIT process.· High DC current gain (hFE=500 to 1200).· Large current capacity.· Low colletor-to-emitter saturation voltage (VCE(sat)£0.5V max).· High VEBO (VEBO³1...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 25 |
| VEBO [V] | 15 |
| IC [A] | 0.3 |
| PC [W] | 0.6 |
| Electrical characteristics | |
|---|---|
| hFE min | 500 |
| hFE max | 1200 |
| VCE [V] | 5 |
| IC [mA] | 10 |
| VCE (sat) typ [V] | 0.18 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 200 |
| IB [mA] | 4 |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
()30 |
V | |
| Collector-emitter voltage |
VCEO |
()25 |
V | |
| Emitter-base voltage |
VEBO |
()15 |
V | |
| Collector current |
Ic |
()300 |
mA | |
| Collector Current (Pulse) |
ICP |
()500 |
mA | |
| Collector Dissipation |
PC |
600 |
mW | |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |