Features: · Adoption of MBIT process.· High DC current gain.· Large current capacity.· Low collector-to-emitter saturation voltage.· High VEBO.Application· AF amplifier, various drivers.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO ...
2SA1562: Features: · Adoption of MBIT process.· High DC current gain.· Large current capacity.· Low collector-to-emitter saturation voltage.· High VEBO.Application· AF amplifier, various drivers.PinoutSpecif...
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| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
()30 |
V | |
| Collector-emitter voltage |
VCEO |
()25 |
V | |
| Emitter-base voltage |
VEBO |
()15 |
V | |
| Collector current |
Ic |
()1.2 |
A | |
| Collector Current (Pulse) |
ICP |
()2 |
A | |
| Collector Dissipation |
PC |
Tc=25°C |
1 15 |
W |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 25 |
| VEBO [V] | 15 |
| IC [A] | 1.2 |
| PC [W] | 15
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 500 |
| hFE max | 1200 |
| VCE [V] | 5 |
| IC [mA] | 100 |
| VCE (sat) typ [V] | 0.1 |
| VCE (sat) max [V] | 0.5 |
| IC [mA] | 500 |
| IB [mA] | 10 |