Features: · High breakdown voltage.· Adoption of MBIT process.· Excellent hFE linearity.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO -400 V Collector-emitter voltage VCEO -400 V Emitter-base voltage VEBO ...
2SA1700: Features: · High breakdown voltage.· Adoption of MBIT process.· Excellent hFE linearity.PinoutSpecifications Parameter Symbol Conditions Ratings Unit Collector-base voltage VCBO...
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| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
-400 |
V | |
| Collector-emitter voltage |
VCEO |
-400 |
V | |
| Emitter-base voltage |
VEBO |
-5 |
V | |
| Collector current |
Ic |
-200 |
mA | |
| Collector Current (Pulse) |
ICP |
-400 |
mA | |
| Collector Dissipation |
PC |
Tc=25°C |
1 10 |
W |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |
| Absolute maximum ratings | |
|---|---|
| VCBO [V] | 400 |
| VCEO [V] | 400 |
| IC [A] | 0.2 |
| PC [W] | 10 |
| Electrical characteristics | |
|---|---|
| hFE min | 60 |
| hFE max | 200 |
| VCE [V] | 10 |
| IC [mA] | 50 |
| fT typ [MHz] | 70 |
| VCE [V] | 30 |
| IC [mA] | 10 |
| VCE (sat) typ [V] | - |
| VCE (sat) max [V] | 0.8 |
| IC [mA] | 50 |
| IB [mA] | 5 |