Application·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.Specifications SYMBOL VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-emitter...
2SA1741: Application·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.Specifica...
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·This type of power transistor is developed for high-speed switching and features a high hFE at low VCE(sat),which is ideal for use as a driver in DC/DC converters and actuators.
SYMBOL | VALUE | UNIT | |
VCBO | Collector-Base Voltage | -100 | V |
VCEO | Collector-emitter voltage | -60 | V |
VEBO | Emitter -base voltage | -7.0 | V |
IC | Collector Current-Continuous | -5.0 | A |
IB | Base Current-Continuous | -10 | A |
ICM | Collector Current-Peak | -2.5 | A |
PT | Total Power Dissipation @Ta=25 | 2.0 | A |
Total Power Dissipation @ TC=25 |
25 | W | |
Tj | Junction temperature | 150 | |
Tstg | Storage temperature | -55~150 |
The 2SA1741 features:
·Collector-Emitter Sustaining Voltage-: VCEO(SUS)= -60V(Min)
·High DC Current Gain-: hFE= 100(Min)@ (VCE= -2V , IC= -1A)
·Low Saturation Voltage-: VCE(sat)= -0.3V(Max)@ (IC= -3A, IB= -0.15A)