Features: · Adoption of FBET processes.· Large current capacity.· Low collector-to-emitter saturation voltage.· Small size making it easy to provide high-density, small-sized hybrid ICs.PinoutSpecifications Absolute maximum ratings VCEO [V] 20 IC [A] 2.5 PC [W] 1.3 When m...
2SA1896: Features: · Adoption of FBET processes.· Large current capacity.· Low collector-to-emitter saturation voltage.· Small size making it easy to provide high-density, small-sized hybrid ICs.PinoutSpecif...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 20 |
| IC [A] | 2.5 |
| PC [W] | 1.3
When mounted on ceramic substrate (250mm²×0.8mm) 1unit |
| Electrical characteristics | |
|---|---|
| hFE min | 140 |
| hFE max | 400 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.22 |
| VCE (sat) max [V] | 0.4 |
| IC [A] | 1.5 |
| IB [mA] | 30 |
| Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Collector-base voltage |
VCBO |
-25 |
V | |
| Collector-emitter voltage |
VCEO |
-20 |
V | |
| Emitter-base voltage |
VEBO |
-7 |
V | |
| Collector current |
Ic |
-2.5 |
A | |
| Collector Current (Pulse) |
ICP |
-5 |
A | |
| Collector Dissipation |
PC |
1.3 |
W | |
| Junction temperature |
Tj |
150 |
°C | |
| Storage temperature |
Tstg |
-55 to +150 |
°C |