2SA1930(Q,M), US $ .21-.34 , Toshiba, 2SA1930(Q,M) DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00206327 Detail

2SA1930(Q,M): Transistors Bipolar (BJT) PNP 180V 2A Transistor

2SA1930(Q,M) Data Sheet

US $ .21~.34 / Piece | Get Latest Price

Part Number:: 2SA1930(Q,M)
Mfg:: Toshiba
Supply Ability:: 5000

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Upload time: 2025/12/18

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Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	- 180 V
Emitter- Base Voltage VEBO :	- 5 V	DC Collector/Base Gain hfe Min :	50
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-220 NIS

Description

Maximum DC Collector Current :
Configuration :
Maximum Operating Frequency :
Packaging :
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : - 5 V
Mounting Style : Through Hole
DC Collector/Base Gain hfe Min : 50
Package / Case : TO-220 NIS
Collector- Emitter Voltage VCEO Max : - 180 V

Parameters:

Technical/Catalog Information	2SA1930(Q,M)
Vendor	Toshiba
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	180V
Current - Collector (Ic) (Max)	2A
Power - Max	20W
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Through Hole
Package / Case	2-10R1A (TO-220 NIS)
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	2SA1930 Q,M 2SA1930Q,M

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2SA1930(Q,M)

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