Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-sized package permitting applied sets to be made small and slim.· High allowable power dissipation.Application· Relay drivers, lamp drivers, motor dr...
2SA2014: Features: · Adoption of MBIT processes.· Large current capacitance.· Low collector-to-emitter saturation voltage.· High-speed switching.· Ultrasmall-sized package permitting applied sets to be made ...
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| Absolute maximum ratings | |
|---|---|
| VCEO [V] | 15 |
| IC [A] | 9 |
| PC [W] | 3.5
Tc=25°C |
| Electrical characteristics | |
|---|---|
| hFE min | 200 |
| hFE max | 560 |
| VCE [V] | 2 |
| IC [A] | 0.5 |
| VCE (sat) typ [V] | 0.16 |
| VCE (sat) max [V] | 0.24 |
| IC [A] | 4.5 |
| IB [mA] | 90 |
|
Parameter |
Symbol |
Conditions |
Limits |
Unit |
| Collector-base voltage |
VCBO |
()150 |
V | |
| Collector-emitter voltage |
VCEO |
()15 |
V | |
| Emitter-base voltage |
VEBO |
()5 |
V | |
| Collector current |
IC |
()9 |
A | |
| Collector current(Pulse) |
ICP |
()12 |
A | |
| Base Current |
IB |
()1.2 |
A | |
| Collector Dissipation |
PC |
Mounted on a ceramic board (250mm2X0.8mm) |
1.3 |
W |
| Tc=25°C |
3.5 |
W | ||
| Junction temperature |
Tj |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |